voidless-hermetically sealed surface mount fast recovery g la ss re c tifier s www. microsemi . com scottsdale division 1n5186us thru 1N5190US 1n5186us ? 1N5190US descri pt i on appearan ce this fast recovery rectifier diode series is ideal for high-reliability applications where a failure cannot be tolerated. these industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically sealed with voidless-glass construction using an internal category i metallurgical bond. these devices are also available in military qualified axial-leaded packages by deleting the us suffix. microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafas t device types in both through-hole and surface mount packages. package e or d-5b important: for the most current data, consult microsemis website: http://www.microsemi.com feat u res appli cat i on s / ben efi t s ? surface mount equivalent to the popular jedec registered 1n5186 to 1n5190 series ? voidless hermetically sealed glass package ? triple-layer passivation ? internal category i metallurgical bonds ? working peak reverse voltage 100 to 600 volts. ? further options in screening in accordance with mil- prf-19500/424 for jan, jantx, and jantxv by adding a mq, mx, or mv prefix resp ectively, e.g. mx1n5186us, mv1n5187us, etc. ? axial-leaded package equivalents also available (see separate data sheet for 1n5186 thru 1n5190) ? fast recovery 3 amp rectifiers 100 to 600 v ? military and other high-reliability applications ? general rectifier applicat ions including bridges, half-bridges, catch diodes, etc. ? high forward surge current capability ? extremely robust construction ? low thermal resistance ? controlled avalanche with peak reverse power capability ? inherently radiation hard as described in microsemi micronote 050 m ax i m u m rat i n gs m ech an i cal an d pack agi n g ? junction & storage temperature: -65 o c to +175 o c ? thermal resistance: 10 o c/w junction to end cap ? thermal impedance: 1.5 o c/w @ 10 ms heating time ? average rectified forward current (i o ): 3.0 amps @ t a = 25oc and 0.700 amps at t a = 150oc ? forward surge current: 80 amps @ 8.3 ms half-sine ? solder temperatures: 260oc for 10 s (maximum) ? case: hermetically sealed voidless hard glass with tungsten slugs ? terminations: end caps are copper with tin/lead (sn/pb) finish. note: pr evious inventory had solid silver end caps with tin/lead (sn/pb) finish. ? marking: cathode band only ? polarity: cathode indicated by band ? tape & reel option: standard per eia-481-b ? weight: 539 mg ? see package dimensions on last page electrical ch aract eri st i cs working peak reverse voltage v rwm minimum breakdown voltage v br @ 50 a forward voltage v f @ 9a (pulsed) maximum reverse current i r @ v rwm maximum reverse recovery time t rr average rectified current amps i o 25 o c 100 o c 25 o c 150 o c type volts volts min volts max volts a a ns amps amps 1n5186us 1n5187us 1n5188us 1n5189us 1N5190US 100v 200v 400v 500v 600v 120v 240v 480v 550v 660v 0.9v 1.5v 2.0 100 150 200 250 300 400 3.0 3.0 3.0 3.0 3.0 0.7 0.7 0.7 0.7 0.7 microsemi scottsdale division page 1 copyright ? 2009 10-30-2009 rev c, sd61a 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 downloaded from: http:///
voidless-hermetically sealed surface mount fast recovery g la ss re c tifier s microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 2 www. microsemi . com scottsdale division 1n5186us thru 1N5190US 1n5186us ? 1N5190US sy m bols & defi n i t i on s symbol definition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current. v rwm working peak reverse voltage: the maximum peak voltage that can be app lied over the operating temperature range. v f maximum forward voltage: the maximum forward volt age the device will exhibit at a specified current. i r maximum leakage current: the maximum leakage curre nt that will flow at the specified voltage and temperature. t rr reverse recovery time: the time interval betwe en the instant the current passes through zero when changing from the forward direction to the reverse di rection and a specified decay point after a peak reverse current occurs. pack age di m en si on s note: this package outline has also previously pad layout been identified as d-5b inches mm a 0.288 7.32 b 0.070 1.78 c 0.155 3.94 note: if mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. inches mm min max min max bl .200 .225 5.08 5.72 bd .137 .148 3.48 3.76 ect .019 .028 0.48 0.711 s .003 --- 0.08 --- copyright ? 2009 10-30-2009 rev c, sd61a downloaded from: http:///
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